Conduction Mechanism in RuO2-Based Thick Films
К. FlachbartInstitute of Experimental Physics, Watsonova 47, SK-04353 Košice, SlovakiaV. Pavl�kInstitute of Experimental Physics, Watsonova 47, SK‐04353 Košice, SlovakiaN. Toma?ovi?ov�Institute of Experimental Physics, Watsonova 47, SK‐04353 Košice, SlovakiaC. J. AdkinsCavendish Laboratory, Madingley Road, Cambridge, CB3 0HE, U.KM. SomoraTechnical University, SK-04389 Košsice, SlovakiaJ. LeibUniversität Bayreuth, D-95440 Bayreuth, GermanyG. EskaUniversität Bayreuth, D-95440 Bayreuth, Germany
1998en
ABI
Аннотация
The paper presents resistivity characteristics of RuO2-based thick resistive films (temperature and magnetic field dependences), and analyzes them from the point of view of the possible conduction mechanism at low temperatures. It is shown that simple models based on tunnelling of charge carriers between conductive RuO2 grains and on variable range hopping of carriers between localized impurity states in the glass matrix via thermal activation do not provide a satisfactory explanation for the electrical conductivity of the investigated thick film resistors. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles which might explain the observed behaviour.
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