Formation of Se2 quasimolecules in selenium-doped silicon

The kinetics of the formation of impurity complexes associated with selenium is investigated. The stationary density of complexes is obtained as a function of temperature and the density of selenium atoms that occupy silicon lattice sites. It is established that in the process of interconversions of electrically active complexes in the temperature range 670–1000 °C the total number of atoms participating in complex-forming reactions remains unchanged at any point of the spatial distribution of the impurity. The kinetics of accumulation of centers with ionization energy 0.2 eV is satisfactorily described by a scheme of quasichemical reactions leading to the formation and decomposition of Se2 quasimolecules. In the ideal, strongly dilute solution approximation the binding energy of a Se2 quasimolecule is 1.35 eV.

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