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Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS<sub>2</sub>.

Mukul BhatnagarInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland. [email protected]Tomasz WoźniakDepartment of Semiconductor Materials Engineering, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, PolandŁucja KipczakInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandNatalia ZawadzkaInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandKatarzyna Olkowska‐PuckoInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandMagdalena GrzeszczykInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandJan PawłowskiInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandKenji WatanabeResearch Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, JapanTakashi TaniguchiInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, JapanA. BabińskiInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, PolandMaciej R. MolasInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland. [email protected]
2022en
ABI

Аннотация

The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS[Formula: see text] encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E[Formula: see text]([Formula: see text]) and A[Formula: see text]([Formula: see text]) along with their Davydov-split counterparts, i.e. E[Formula: see text]([Formula: see text]) and B[Formula: see text]([Formula: see text]). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A[Formula: see text]([Formula: see text]) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B[Formula: see text]([Formula: see text]) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A[Formula: see text]([Formula: see text]) counterpart.

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