Статья

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Tyler A. GrowdenU.S. Naval Research Laboratory 1 , Washington, DC 20375, USAEvan M. CornuelleDepartment of Electrical and Computer Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USADavid F. StormU.S. Naval Research Laboratory 1 , Washington, DC 20375, USAWeidong ZhangDepartments of Physics and Electrical Engineering, Wright State University 3 , Dayton, Ohio 45435, USAE. R. BrownDepartments of Physics and Electrical Engineering, Wright State University 3 , Dayton, Ohio 45435, USALogan WhitakerDepartment of Electrical and Computer Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USAJeffrey W. DaultonLincoln Laboratory, Massachusetts Institute of Technology 4 , Lexington, Massachusetts 02421, USAR. J. MolnarLincoln Laboratory, Massachusetts Institute of Technology 4 , Lexington, Massachusetts 02421, USADavid J. MeyerU.S. Naval Research Laboratory 1 , Washington, DC 20375, USAPaul R. BergerDepartment of Electrical and Computer Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USA

2019en

ABI

Аннотация

We report on the design and fabrication of ultrahigh current density GaN/AlN double barrier resonant tunneling diodes grown via rf-plasma assisted molecular-beam epitaxy. The device structure was grown on a metal-organic chemical vapor deposition GaN-on-sapphire template. The devices displayed repeatable room temperature negative differential resistance with peak tunneling current densities (Jp) between 637 and 930 kA/cm2. Analysis of temperature dependent measurements revealed the presence of severe self-heating effects, which allow strong phonon scattering that deteriorates the electron quantum transport. Finally, a qualitative comparison to the same structure grown on a low dislocation density freestanding GaN substrate has shown that sapphire-based templates are a feasible alternative.

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Идентификаторы

DOI: 10.1063/1.5095056

Цитирования и источники

Цитирований: 2Использованных источников: 0

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