Работы, цитирующие эту работу

Работ: 2

Работа: High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

1. The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics

   Alexander Doroshkevich, Anna Zakharova, Б. Л. Оксенгендлер +23

   СтатьяChalcogenide Semiconductor Thin FilmsNanomaterials2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.000834

2. The Rectifying Contact of Hydrated Multi-Dimensional YSZ Nanoparticles for Advanced Electronics

   Alexander Doroshkevich, Anna Zakharova, Б. Л. Оксенгендлер +18

   ПрепринтMaterial Science and ThermodynamicsPreprints.org2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.preprint.000024