Improved Ag doped Bi2S3 nanowire-based photodiode: Fabrication and performance
J. ArumugamDepartment of Physics, Velammal Engineering College, Chennai 600066, Tamil Nadu, IndiaAmal GeorgePG & Research Department of Physics, Sacred Heart College, Tirupattur 635601, Tamil Nadu, IndiaA. Dhayal RajPG & Research Department of Physics, Sacred Heart College, Tirupattur 635601, Tamil Nadu, IndiaA. Albert IrudayarajPG & Research Department of Physics, Sacred Heart College, Tirupattur 635601, Tamil Nadu, IndiaR.L. JosephineDepartment of Electrical and Electronic Engineering, National Institute of Technology, Trichy 620015, Tamil Nadu, IndiaS. John SundaramPG & Research Department of Physics, Sacred Heart College, Tirupattur 635601, Tamil Nadu, IndiaTahani Saad AlgarniDepartment of Chemistry, College of Science, King Saud University, P.O. Box 22452, Riyadh 11495, Saudi ArabiaAmal M. Al‐MohaimeedDepartment of Chemistry, College of Science, King Saud University, P.O. Box 22452, Riyadh 11495, Saudi ArabiaBalamuralikrishnan BalasubramanianDepartment of Food Science and Technology, College of Life Science, Sejong University, Seoul 05006, South KoreaK. KaviyarasuNanosciences African Network (NANOAFNET), Materials Research Group (MRG), iThemba LABS-National Research Foundation (NRF), 1 Old Faure Road, 7129, PO Box 722, Somerset West, Western Cape Province, South Africa
2021en
ABI
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