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Analysis for nonradiative recombination loss and radiation degradation of Si space solar cells

Masafumi YamaguchiSemiconductors Laboratory Toyota Technological Institute 2‐12‐1 Hisakata, Tempaku Nagoya 468‐8511 JapanKan‐Hua LeeSemiconductors Laboratory Toyota Technological Institute 2‐12‐1 Hisakata, Tempaku Nagoya 468‐8511 JapanKenji ArakiSemiconductors Laboratory Toyota Technological Institute 2‐12‐1 Hisakata, Tempaku Nagoya 468‐8511 JapanNobuaki KojimaSemiconductors Laboratory Toyota Technological Institute 2‐12‐1 Hisakata, Tempaku Nagoya 468‐8511 JapanYasuki OkunoInstitute for Materials Research Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai 980‐8577 JapanMitsuru ImaizumiResearch and Development Directorate Japan Aerospace Exploration Agency 2‐1‐1 Sengen, Tsukuba Ibaraki 305‐8505 Japan
2020en
ABI

Аннотация

Abstract Silicon space solar cells are currently attracting attention again for their relatively low‐cost feature with sufficient performance, and they are expected to resume into the space market especially by short‐term mission spacecraft designers. In this paper, efficiency potential of crystalline Si space solar cells is analyzed by considering external radiative efficiency (ERE), voltage and fill factor losses. Crystalline Si space solar cells have efficiency potential of more than 26% by realizing ERE of 20% from about 0.2% and normalized resistance of less than 0.05 from around 0.15. Nonradiative recombination and resistance losses in Si space solar cells are also discussed. Radiation degradation of Si space solar cells is also analyzed. Advanced Si solar cells such as passivated emitter, hetero‐junction, and back contact solar cells are expected to use as space solar cells. Potential of advanced Si solar cells for space applications is discussed from point view of radiation degradation.

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