Lead zirconate titanate thick film with enhanced electrical properties for high frequency transducer applications
Аннотация
Piezoelectric Pb(Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> )O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thick film with the thickness around 10 mum has been deposited on the (111) Pt/Ti/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si substrate using a ceramic powder/sol-gel solution modified composite method. X-ray diffraction analysis and scanning electron microscope revealed that the film was in the well-crystallized perovskite phase and cracked free. At 1 KHz, The dielectric constant and the loss were 1925 and 0.015, respectively. The remnant polarization was 42.0 muC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at room temperature. A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 50% at 156 MHz.
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