Работы, цитирующие эту работу

Работ: 2

Работа: Carrier Polarity Control in α-MoTe₂ Schottky Junctions Based on Weak Fermi-Level Pinning

1. Non-volatile phototransistor based on two dimensional MoTe₂ nanostructures

   Kamoladdin Saidov, Khakimjan Butanov, Jamoliddin Razzokov +3

   Статья2D Materials and ApplicationsE3S Web of Conferences2023Цитирований: 3

   ABIABI:AkademIndex/openalex/2023.article.001669

2. Investigation of electrical and optoelectrical efficiency in the fabricated two-dimensional MoTe2 field-effect transistor

   Kamoladdin Saidov, Khojiakbar Foziljonov, Shodiyor Kholmonov +1

   Статья2D Materials and ApplicationsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009109