Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials
I.B. SapaevNew Uzbekistan University, Tashkent, UzbekistanGanjaboy S. Boltaev“Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, UzbekistanБ. СапаевTashkent State Agrarian University, Tashkent, UzbekistanJonibek Sh. Abdullayev“Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, UzbekistanS. Sadullaev“Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, UzbekistanF. Kh. Khasanov“Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, UzbekistanN. O. AkhmedjonovNurafshan Branch of Tashkent University of Information Technologies Named After Muhammad Al-Khwarizmi, Uzbekistan
ABI
Аннотация
In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range T sourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range T p ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment.
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