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Статья

MOF‐Based Sustainable Memory Devices

Nikita K. KulachenkovSchool of Physics and Engineering ITMO University St. Petersburg 197101 RussiaQuentin HaarUniversite de Lorraine CNRS, IJL Nancy F‐54000 FranceSergei A. ShipilovskikhSchool of Physics and Engineering ITMO University St. Petersburg 197101 RussiaAndrei N. YankinSchool of Physics and Engineering ITMO University St. Petersburg 197101 RussiaJ.F. PiersonUniversite de Lorraine CNRS, IJL Nancy F‐54000 FranceAlexandre NominéSchool of Physics and Engineering ITMO University St. Petersburg 197101 RussiaValentin A. MilichkoSchool of Physics and Engineering ITMO University St. Petersburg 197101 Russia
2021en
ABI

Аннотация

Abstract Data storage, processing, and communications are the backbone of the digital world and focus the innovation efforts of the microelectronics industry. Recent raw material shortages, however, have revealed the danger of sourcing for the digital industry. At a time of a significant increase in demand for data storage systems, it is urgent to consider the sustainability of the resources used for devices. By diluting inorganic elements in an organic matrix, metal–organic frameworks (MOFs) are of substantial interest for sustainable technologies. Moreover, they have shown great potential as active materials for electronic, optical, and magnetic memory devices, paving the way to accessible, sustainable, and recyclable microelectronic devices. Based on the number of fundamental studies of the bistability of MOFs, their scalability, recyclability, and low energy consumption, MOFs are highlighted as sustainable materials for a new generation of memristive devices. Finally, considering the “green” chemistry of specific MOF, their flexibility, as well as the market of microelectronics and mineral consumption, the future development of MOF‐based memory devices and socio‐economic profits from their utilization is predicted.

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