Highly sensitive thermoelectric touch sensor based on p-type SnO <i> _x </i> thin film

Abstract Here, the ability of using p-type tin oxide (SnO x ) thin films as a thermal sensor has been investigated. Firstly, the thermoelectric performance was optimized by controlling the thickness of the SnO x film from 60 up to 160 nm. A high Seebeck coefficient of +263 μ V K −1 and electrical conductivity of 4.1 × 10 2 (S m −1 ) were achieved in a 60 nm thick SnO x film, due to a compact nanostructured film and the absence of the Sn metallic phase, which was observed for the thicker SnO x film leading to a typical thermoelectric transport properties of a n-type Sn film. Moreover, x-ray photoelectron spectroscopy revealed the co-existence of SnO (79.7%) and SnO 2 (20.3%) phases in the 60 nm thick SnO x film, while the optical measurements revealed an indirect gap of 1.8 eV and a direct gap of 2.7 eV, respectively. The 60 nm-SnO x thin film have been tested as a thermoelectric touch sensor, achieving a V signal / V noise ≈ 20, with a rise time &lt;1 s. Therefore, this work provides an efficient way for developing highly efficient thermal sensors with potential use in display technologies.

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