Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering
Bertrand MeyerI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyA. PolityI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyB. FarangisI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyYunbin HeI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyD. HasselkampI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyTh. KrämerI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, GermanyC. WangI. Physikalisches Institut, Justus-Liebig-Universität Giessen , Heinrich-Buff-Ring 16, 35392 Giessen, Germany
2004en
ABI
Аннотация
A series of ZnO1−xSx films with 0⩽x⩽1.0 was deposited by radio-frequency reactive sputtering on different substrates. The structural characterization by x-ray diffraction measurements revealed that the films have wurtzite symmetry and correlated investigations of the layer composition by photoelectron spectroscopy showed that the lattice constant varies linearly with x. The composition dependence of the band gap energy in the ternary system was determined by optical transmission and the optical bowing parameter was found to be about 3eV.
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