Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
Sunil RathoreVLSI Design and Nano-scale Computational Lab, Electronics and Communication Engineering Department, PDPM-IIITDM, 482005, IndiaRajeewa Kumar JaisawalVLSI Design and Nano-scale Computational Lab, Electronics and Communication Engineering Department, PDPM-IIITDM, 482005, IndiaP. N. KondekarVLSI Design and Nano-scale Computational Lab, Electronics and Communication Engineering Department, PDPM-IIITDM, 482005, IndiaNavjeet BaggaIndian Institute of Technology Bhubaneswar, Odisha, India
2022en
ABI
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