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Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current

Hai-Yang MaKey Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, ChinaMengli HuDepartment of Physics, The Hong Kong University of Science and Technology, Hong Kong, ChinaNana LiDepartment of Physics, The Hong Kong University of Science and Technology, Hong Kong, ChinaJianpeng LiuDepartment of Physics, The Hong Kong University of Science and Technology, Hong Kong, ChinaWang YaoDepartment of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, ChinaJinfeng JiaKey Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China. [email protected]Junwei LiuDepartment of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
2021en
ABI

Аннотация

Abstract We propose a new type of spin-valley locking (SVL), named C- paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C- paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C -paired SVL in monolayer V 2 Se 2 O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.

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