Статья

Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials

Yunqin LiKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, ChinaXian ZhangHenan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, ChinaXiao ShangInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, ChinaQiwen HeInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, ChinaDai-Song TangInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, ChinaXiaochun WangInstitute of Atomic and Molecular Physics, Jilin University, Changchun 130012, ChinaChun‐Gang DuanKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China

2023en

ABI

Аннотация

The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP4 monolayer exhibits a large valley polarization up to 100 meV, which can be effectively operated by reversing magnetization. Interestingly, the antiferromagnetic VSiGeP4 bilayers with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, supporting the proposed strategy for manipulating valley physics via ferroelectric switching and interlayer sliding. In addition, the VSiGeP4 monolayer contains remarkable tunable piezoelectricity regulated by electron correlation U. This study proposes a feasible idea for regulating valley polarization and a general design idea for multifunctional devices with multiferroic and piezoelectric properties, facilitating the miniaturization and integration of nanodevices.

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Идентификаторы

DOI: 10.1021/acs.nanolett.3c03238

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar