Doping properties of monoclinic BiVO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>studied by first-principles density-functional theory

The intrinsic and extrinsic doping properties of BiVO${}_{4}$, i.e., the formation energies and transition energy levels of defects and impurities, have been studied systematically by first-principles density-functional theory. We find that for doping caused by intrinsic defects, O vacancies are shallow donors and Bi vacancies are shallow acceptors. However, these defects compensate each other and can only lead to moderate $n$-type and $p$-type conductivities at Bi-rich and O-rich growth conditions, respectively. To obtain BiVO${}_{4}$ with high $n$-type and $p$-type conductivities, which are required for forming Ohmic contacts, extrinsic doping using foreign impurities is necessary. Our results reveal that Sr, Ca, Na, and K atoms on Bi sites are very shallow acceptors and have rather low formation energies. The calculated Fermi-level pinning positions predict that doping of these impurities under oxygen-rich growth conditions should result in outstanding $p$-type conductivity. Substitutional Mo and W atoms on V sites are very shallow donors and have very low formation energies. Fermi-level pinning position calculations expect the doping of Mo and W under oxygen-poor growth conditions to produce excellent $n$-type conductivity. Also discussed is the dependence of formation energies and transition energies of defects on the atomic size and atomic chemical potential trends.

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