Статья

Piezoelectric PZT thick films on LaNiO<sub>3</sub>buffered stainless steel foils for flexible device applications

Baoyi ZhuNIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111, USADongdong LiSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of ChinaQifa ZhouNIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111, USAJiao ShiDepartment of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of ChinaK. K. ShungNIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111, USA

2008en

ABI

Аннотация

In this paper, we report on 4.5µm piezoelectric Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO(3) (LNO) buffer layers using a ceramic powder/sol-gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm(-1) with remanent polarization and coercive electric field values of 27µC cm(-2) and 85 kV cm(-1), respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 × 10(-5) Acm(-2) over the range of 0 to ±150V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.

Перевод пока недоступен

Идентификаторы

DOI: 10.1088/0022-3727/42/2/025504

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar