10.6μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide
Xiubao SuiSchool of Electronic Engineering and Optoelectronic Technology, NUST, Nanjing 210094, ChinaWeiji HeSchool of Electronic Engineering and Optoelectronic Technology, NUST, Nanjing 210094, ChinaChao ZuoSchool of Electronic Engineering and Optoelectronic Technology, NUST, Nanjing 210094, ChinaQian ChenSchool of Electronic Engineering and Optoelectronic Technology, NUST, Nanjing 210094, ChinaGuohua GuSchool of Electronic Engineering and Optoelectronic Technology, NUST, Nanjing 210094, China
2014en
ABI
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