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Recent Developments of Amorphous Selenium-Based X-Ray Detectors: A Review

Heyuan HuangDepartment of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana–Champaign, Champaign, USAShiva AbbaszadehDepartment of Electrical and Computer Engineering, University of California at Santa Cruz, Santa Cruz, USA
2019en
ABI

Аннотация

Amorphous selenium (a-Se) is a photoconductive material that has been intensively investigated from its early application in xerography to its present application in flat panel X-ray imagers. It can be deposited up to a few millimeters thick over a large area. Its high vapor pressure yields uniform coverage in novel device structures for low-cost and large-area applications. The evidence of avalanche multiplication in a-Se and application of a-Se in high-gain avalanche rushing photoconductor video-tubes goes back to the early 1980s. Over the past decade there has been increasing research interest in novel detector structures and integration of a-Se with new materials to leverage the avalanche properties. We summarize some of the shortcomings of a-Se such as low charge carrier mobility, low charge conversion efficiency, depth dependence, and high dark current at high electric fields. We then highlight recent developments in a-Se-based devices to address these shortcomings and enable picosecond timing performance and high detection efficiency.

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