Статья

Bandgap engineering of two-dimensional semiconductor materials

Andrey ChavesDepartamento de Fsica, Universidade Federal do Cear, Caixa Postal 6030, Campus do Pici, Fortaleza, Cear 60455-900, BrazilJavad G. AzadaniDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USAHussain AlsalmanDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USAD. R. da CostaDepartamento de Fsica, Universidade Federal do Cear, Caixa Postal 6030, Campus do Pici, Fortaleza, Cear 60455-900, BrazilRiccardo FrisendaMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Campus de Cantoblanco, Madrid E28049, SpainA. J. ChavesDepartamento de Fsica, Universidade Federal do Cear, Caixa Postal 6030, Campus do Pici, Fortaleza, Cear 60455-900, BrazilSeung Hyun SongCenter for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaYoung Duck KimDepartment of Physics, Kyung Hee University, Seoul 02447, Republic of KoreaDaowei HeDepartment of Chemistry and Biochemistry and, University of California, Los Angeles, CA 90095, USAJiadong ZhouSchool of Materials Science and Engineering, Nanyang Technological University, Singapore, SingaporeAndrés Castellanos-GómezMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Campus de Cantoblanco, Madrid E28049, SpainF. M. PeetersDepartment of Physics, University of Antwerp, Groenenborgerlaan 171, Antwerpen B-2020, BelgiumZheng LiuSchool of Materials Science and Engineering, Nanyang Technological University, Singapore, SingaporeChristopher L. HinkleDepartment of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USASang‐Hyun OhDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USAPeide D. YeSchool of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USASteven J. KoesterDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USAYoung Hee LeeCenter for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaPhaedon AvourisIBM Thomas J. Watson Research Center, Yorktown Heights, NY, USAXinran WangNational Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaTony LowDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA

2020en

ABI

Аннотация

Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.

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Идентификаторы

DOI: 10.1038/s41699-020-00162-4

Цитирования и источники

Цитирований: 2Использованных источников: 0

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