Reduction of bulk and interface defects <i>via</i> photo-annealing treatment for high-efficiency antimony selenide solar cells
Xiaoyang LiangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaXinhua WangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaQi ChangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaBingxin YangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaWei DangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaZheng ZhangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaYingnan GuoHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaLin YangHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, ChinaZhiqiang LiHebei Province Optoelectronic Information Materials Laboratory, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
2024en
ABI
Аннотация
A novel interface engineering strategy with a photo-annealing treatment is proposed for regulating the interface of the Sb 2 Se 3 /CdS heterojunction.
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