Работы, цитирующие эту работу

Работ: 4

Работа: Energy band diagrams, of Cu2SZnXCd1−xS(0 ≦ x ≦ 1) heterojunctions

1. Energy Band Models of n-Znx Cd1-xS−p-CdTe and n-ZnxCd1−xS−p-Si (0 ≦ × ≦ 1) Heterojunctions

   T.M. Razykov, B. Kh. Kadyrov, M. A. Khodyaeva

   СтатьяChalcogenide Semiconductor Thin Filmsphysica status solidi (a)1985Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.486347

2. Physical properties of II–VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition

   T.M. Razykov

   СтатьяChalcogenide Semiconductor Thin FilmsThin Solid Films1988Цитирований: 2

   ABIABI:AkademIndex/openalex/1988.article.000006

3. Energy Band Model of Ultrathin Solar Cells with Thickness up to 5 μm

   S. A. Azimov, T.M. Razykov

   СтатьяChalcogenide Semiconductor Thin Filmsphysica status solidi (a)1985Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.486322

4. Fabrication and crystallophysical properties of (ZnSe)x(CdTe)1−x (x = 0−1) multicomponent system films

   T.M. Razykov

   СтатьяChalcogenide Semiconductor Thin FilmsThin Solid Films1988Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.486323