Статья

Unconventional Electronic Structure Evolution with Hole Doping in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>CaCu</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>O</mml:mi></mml:mrow><mml:mrow><mml:mn>8</mml:mn><mml:mo>+</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>: Angle-Resolved Photoemission Results

D. S. MarshallSolid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305D. S. DessauDepartment of Physics, University of Colorado, Boulder, Colorado 80309A. G. LoeserSolid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305C. H. ParkSolid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305A. Y. MatsuuraSolid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305J. N. EcksteinGinzton Research Center, Varian Associates, Palo Alto, California 94304-1025I. BožovićGinzton Research Center, Varian Associates, Palo Alto, California 94304-1025P. FournierDepartment of Applied Physics, Stanford University, Stanford, California 94305A. KapitulnikDepartment of Applied Physics, Stanford University, Stanford, California 94305W. E. SpicerSolid State Laboratory, McCullough 251, Stanford University, Stanford, California 94305Zhi‐Xun ShenDepartment of Applied Physics, Stanford University, Stanford, California 94305

1996lv

ABI

Аннотация

We report angle-resolved photoemission results on ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{Ca}}_{1\ensuremath{-}x}{\mathrm{Dy}}_{x}{\mathrm{Cu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ and oxygen depleted ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ investigating the electronic structure changes above ${T}_{c}$ in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with ${T}_{c}$ of 60--70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near $(\ensuremath{\pi},0)$ above ${T}_{c}$.

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Идентификаторы

DOI: 10.1103/physrevlett.76.4841

Цитирования и источники

Цитирований: 2Использованных источников: 0

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