Optimizing the <i>Q</i> value in three-dimensional metallic photonic band gap crystals
W.‐Y. LeungMicroelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011G. TuttleMicroelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011M. M. SigalasAmes National LaboratoryR. BiswasMicroelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011K. M. HoMicroelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011Costas M. SoukoulisMicroelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
1998en
ABI
Аннотация
A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8–26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor (Q) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q⩾300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method.
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