Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
Miki NaganawaKeio University 1 Department of Applied Physics and Physico-Informatics, , 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, JapanYasuo ShimizuKeio University 1 Department of Applied Physics and Physico-Informatics, , 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, JapanMasashi UematsuKeio University 1 Department of Applied Physics and Physico-Informatics, , 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, JapanKohei M. ItohKeio University 1 Department of Applied Physics and Physico-Informatics, , 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, JapanKentarou SawanoY. ShirakiEugene E. HallerUniversity of California at Berkeley 3 and Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
2008en
ABI
Аннотация
Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n-type Ge.
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