Production and annealing of electron irradiation damage in ZnO
D. C. LookSemiconductor Research Center, Wright State University, Dayton, Ohio 45435D. C. ReynoldsSemiconductor Research Center, Wright State University, Dayton, Ohio 45435J. W. HemskySemiconductor Research Center, Wright State University, Dayton, Ohio 45435Robert JonesMaterials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433J. R. SizeloveMaterials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433
1999en
ABI
Аннотация
High-energy (>1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [0001̄] direction (O face). The major annealing stage occurs at about 300–325 °C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more “radiation hard” than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites.
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