Работы, цитирующие эту работу

Работ: 2

Работа: General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

1. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

   СтатьяMuon and positron interactions and applicationsActa Materialia2014Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.489647

2. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

   СтатьяMuon and positron interactions and applicationsActa Materialia2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000157