Quantized conductance of point contacts in a two-dimensional electron gas
B. J. van WeesDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsH. van HoutenDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsC. W. J. BeenakkerDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsJ. WilliamsonDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsLeo P. KouwenhovenDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsD. van der MarelDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The NetherlandsC. T. FoxonDepartment of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands
1988en
ABI
Аннотация
Ballistic point contacts, defined in the two-dimensional electron gas of a GaAs-AlGaAs heterostructure, have been studied in zero magnetic field. The conductance changes in quantized steps of ${e}^{2}$/\ensuremath{\pi}\ensuremath{\Elzxh} when the width, controlled by a gate on top of heterojunction, is varied. Up to sixteen steps are observed when the point contact is widened from 0 to 360 nm. An explanation is proposed, which assumes quantized transverse momentum in the point-contact region.
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