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Theory of Trapped-Hole Centers in Aluminum Oxide

Ralph H. BartramThe University of Connecticut, Storrs, ConnecticutCharles E. SwenbergThe University of Connecticut, Storrs, ConnecticutJ.T. FournierThe University of Connecticut, Storrs, Connecticut
1965en
ABI

Аннотация

Energy levels of trapped-hole centers in gamma- and reactor-irradiated ${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$ are calculated in order to verify models proposed to account for some of the electron-spin resonance (ESR) spectra and to correlate these with optical-absorption spectra. Crystal-field theory is employed in the calculation of energy levels, including a priori calculation of the crystal field on the point-ion model. Lattice distortion by the defect is considered only qualitatively; nevertheless, a number of conclusions are possible. The calculated zero-field splitting of interstitial ${\mathrm{O}}^{0}$, which is 0.268 ${\mathrm{cm}}^{\ensuremath{-}1}$ without distortion and substantially larger with distortion, could account for the absence of an ESR spectrum at $X$ band. A single optical band associated with this center is correlated with a measured band of 2.0 eV. Interstitial ${\mathrm{O}}^{+}$ has a calculated zero-field splitting of 0.174 ${\mathrm{cm}}^{\ensuremath{-}1}$ without distortion, but outward displacement of the two nearest ${\mathrm{Al}}^{3+}$ ions by only 0.17 \AA{} accounts for the observed zero-field splitting of 0.074 ${\mathrm{cm}}^{\ensuremath{-}1}$. No optical absorption is associated with this center. For ${\mathrm{O}}^{\ensuremath{-}}$ adjacent to a charge-deficient cation site, the assumption of a cation vacancy leads to an optical band at $\ensuremath{\Delta}=2.93$ eV which correlates with an observed band at 3.08 eV. The calculated value of $\frac{\ensuremath{\lambda}}{\ensuremath{\Delta}}$, where $\ensuremath{\lambda}$ is the spin-orbit constant, is -0.0057 compared with the ESR value of -0.0073.

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