Статья

Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K

D. W. DenlingerDepartment of Physics, University of California at San Diego, La Jolla, California 92093E.N. AbarraDepartment of Physics, University of California at San Diego, La Jolla, California 92093K. M. AllenDepartment of Physics, University of California at San Diego, La Jolla, California 92093P. W. RooneyDepartment of Physics, University of California at San Diego, La Jolla, California 92093M. T. MesserDepartment of Physics, University of California at San Diego, La Jolla, California 92093Susan K. WatsonDepartment of Physics, University of California at San Diego, La Jolla, California 92093F. HellmanDepartment of Physics, University of California at San Diego, La Jolla, California 92093

1994en

ABI

Аннотация

A new microcalorimeter for measuring heat capacity of thin films in the range 1.5–800 K is described. Semiconductor processing techniques are used to create a device with an amorphous silicon nitride membrane as the sample substrate, a Pt thin film resistor for temperatures greater than 40 K, and either a thin film amorphous Nb–Si or a novel boron-doped polycrystalline silicon thermometer for lower temperatures. The addenda of the device, including substrate, is 4×10−6 J/K at room temperature and 2×10−9 J/K at 4.3 K, approximately two orders of magnitude less than any existing calorimeter used for measuring thin films. The device is capable of measuring the heat capacity of thin film samples as small as a few micrograms.

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Идентификаторы

DOI: 10.1063/1.1144925

Цитирования и источники

Цитирований: 2Использованных источников: 0

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