Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
Q. WahabDepartment of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenA. EllisonDepartment of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenAnne HenryDepartment of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenErik JanzénDepartment of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenC. HallinABB Corp. Research, 721 78, Västerås, SwedenJ. Di PersioRafael Perez Martinez
2000en
ABI
Аннотация
Morphological defects and elementary screw dislocations in 4H–SiC were studied by high voltage Ni Schottky diodes. Micropipes were found to severely limit the performance of 4H–SiC power devices, whereas carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by x-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher.
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