Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
A. I. Veı̆ngerIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaT. V. TisnekIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaI. V. KochmanIoffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaV. I. OkulovMikheev Institute of Metal Physics, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620137, Russia
2017en
ABI
Аннотация
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
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