Статья

Tailoring Electron‐Transfer Barriers for Zinc Oxide/C<sub>60</sub> Fullerene Interfaces

Philip SchulzDepartment of Electrical Engineering Princeton University Princeton New Jersey 08544 USALeah L. KellyDepartment of Chemistry and Biochemistry University of Arizona Tucson Arizona 85721 USAPaul WingetSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta Georgia 30332–0400 USAHong LiSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta Georgia 30332–0400 USAHyungchul KimSchool of Mechanical Engineering and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta Georgia 30332–0250Paul F. NdioneNational Center for Photovoltaics National Renewable Energy Laboratory Golden Colorado 80401 USAAjaya K. SigdelNational Center for Photovoltaics National Renewable Energy Laboratory Golden Colorado 80401 USAJoseph J. BerryNational Center for Photovoltaics National Renewable Energy Laboratory Golden Colorado 80401 USASamuel GrahamSchool of Mechanical Engineering and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta Georgia 30332–0250Jean‐Luc BrédasSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics Georgia Institute of Technology Atlanta Georgia 30332–0400 USAAntoine KahnDepartment of Electrical Engineering Princeton University Princeton New Jersey 08544 USAOliver L. A. MontiDepartment of Chemistry and Biochemistry University of Arizona Tucson Arizona 85721 USA

2014en

ABI

Аннотация

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next‐generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C 60 . A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier‐free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy‐conversion and sensor technologies.

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Идентификаторы

DOI: 10.1002/adfm.201401794

Цитирования и источники

Цитирований: 3Использованных источников: 0

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