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Size-dependent surface luminescence in ZnO nanowires

Ilan ShalishHarvard University, Cambridge, Massachusetts 02138, USAH. TemkinTexas Tech University, Lubbock, Texas 79409, USAV. NarayanamurtiHarvard University, Cambridge, Massachusetts 02138, USA
2004en
ABI

Аннотация

Nanometer sized whiskers (nanowires) offer a vehicle for the study of size-dependent phenomena. While quantum-size effects are commonly expected and easily predicted, size reduction also causes more atoms to be closer to the surface. Here we show that intensity relations of below-band-gap and band-edge luminescence in ZnO nanowires depend on the wire radius. Assuming a surface layer wherein the surface-recombination probability is 1 (surface-recombination approximation), we explain this size effect in terms of bulk-related to surface-related material-volume ratio that varies almost linearly with the radius. This relation supports a surface-recombination origin for the deep-level luminescence we observe. The weight of this surface-luminescence increases as the wire radius decreases at the expense of the band-edge emission. Using this model, we obtain a radius of 30 nm, below which in our wires surface-recombination prevails. More generally, our results suggest that in quantum-size nanowires, surface-recombination may entirely quench band-to-band recombination, presenting an efficient sink for charge carriers that unless deactivated may be detrimental for electronic devices.

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