Статья

Thermoelectric Properties of Al‐Doped Mesoporous ZnO Thin Films

Min Hee HongDepartment of Materials Science and Engineering, Yonsei University, Seoul 120-749Chang-Sun ParkDepartment of Materials Science and Engineering, Yonsei University, Seoul 120-749Won‐Seon SeoKorea Institute of Ceramic Engineering and Technology, Seoul 153-801Young Soo LimKorea Institute of Ceramic Engineering and Technology, Seoul 153-801Jung‐Kun LeeDepartment of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261Hyung‐Ho ParkDepartment of Materials Science and Engineering, Yonsei University, Seoul 120-749

2013en

ABI

Аннотация

Al‐doped mesoporous ZnO thin films were synthesized by a sol‐gel process and an evaporation‐induced self‐assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al‐doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration.

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Идентификаторы

DOI: 10.1155/2013/131537

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar