Photosensitivity of structures based on A<sup>II</sup>B<sup>III</sup><sub>2</sub>C<sup>VI</sup><sub>4</sub>monocrystals
I A ZharikovPeter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, RussiaV. Yu. Rud’Department of Ecology, All-Russian Research Institute of Phytopathology, 143050, Moscow Region, Odintsovo district, B.Vyazyomy, RussiaYu. V. RudDepartment of Solid State Physics, Ioffe Institute, Russian Academy of Sciences, St Petersburg 194021, RussiaE. I. TerukovDepartment of Solid State Physics, Ioffe Institute, Russian Academy of Sciences, St Petersburg 194021, RussiaВ В ДавыдовPeter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, RussiaNatalia BykovaSaint Petersburg State University of Economics, Saint Petersburg, 191023, Russia
2018en
ABI
Аннотация
Monocrystals of ternary compounds of AIIBIII2CVI4 semiconductors (HgGa2S4 and CdGa2S4) and various photosensitive structures based on them were investigated. The photoelectric properties of the structure obtained were studied using natural and linearly polarized light at 300 K. The results show that the structures created can find application as no polarized radiation photodetectors, and with allowance for high-tetragonal compression of the crystal lattice and linearly polarized radiation.
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