Статья

Annealing behaviors of photoluminescence from SiOx:H

Zhixun MaState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 10083, ChinaXianbo LiaoState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 10083, ChinaJie HeState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 10083, ChinaWenchao ChengState Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaGuozhen YueState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaYongqian WangState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaGuanglin KongState Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

1998en

ABI

Аннотация

The strong photoluminescence (PL) of SiOx:H prepared by plasma enhanced chemical vapor deposition has been systematically studied in conjunction with infrared and micro-Raman spectra. We have found that each PL spectrum is comprised of two Gaussian components, a main band and a shoulder. The main band might originate from amorphous silicon clusters embedded in the SiOx network, and its redshift with annealing temperature is due to expansion of the silicon clusters. The shoulder remains at about 835 nm in spite of the annealing temperature and possibly comes from luminescent defect centers. The enhanced PL spectra after 1170 °C annealing are attributed to the quantum confinement effects of nanocrystalline silicon embedded in the SiO2 matrix.

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Идентификаторы

DOI: 10.1063/1.367973

Цитирования и источники

Цитирований: 3Использованных источников: 0

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