Статья

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

Yao GuoPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaXianlong WeiPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaJiapei ShuPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaBo LiuPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaJianbo YinPeking University 2 Center for Nanochemistry, College of Chemistry and Molecular Engineering, , Beijing 100871, People's Republic of ChinaChangrong GuanPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaYuxiang HanPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaSong GaoPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of ChinaQing ChenPeking University 1 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, , Beijing 100871, People's Republic of China

2015en

ABI

Аннотация

The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2-MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4 V to −45 V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.

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Идентификаторы

DOI: 10.1063/1.4914968

Цитирования и источники

Цитирований: 2Использованных источников: 0

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