White Light Emission from ZnO/Zn<sub>0.9</sub>Mg<sub>0.1</sub>O Heterostructures Grown on Si Substrates
Sh. U. YuldashevQuantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-gu, Seoul 100-715, KoreaР. А. НусретовHeat Physics Department, Uzbekistan Academy of Sciences, 28 Katartal, Tashkent 700135, UzbekistanI. V. KhvanHeat Physics Department, Uzbekistan Academy of Sciences, 28 Katartal, Tashkent 700135, UzbekistanVadim Sh. YalishevDepartment of Physics, Konkuk University, 1 Hwayang-dong, Kwangjin-gu, Seoul 143-701, KoreaTae Won KangHeat Physics Department, Uzbekistan Academy of Sciences, 28 Katartal, Tashkent 700135, Uzbekistan
ABI
Аннотация
Light-emitting n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures were grown on single-crystal p-type Si(100) substrates using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. p-Type conductivity in the nitrogen-doped ZnO and Zn0.9Mg0.1O films has been observed. A distinct visible electroluminescence was observed at room temperature from the heterojunction structures under forward bias conditions.
Перевод пока недоступен