Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon

An approach is proposed to calculate the optimal parameters of silicon-based heterojunction solar cells whose key feature is a low rate of recombination processes in comparison with direct-gap semiconductors. It is shown that at relatively low majority-carrier concentrations (N d ∼ 1015 cm–3), the excess carrier concentration can be comparable to or higher than N d . In this case, the efficiency η is independent of N d . At higher N d , the dependence η(N d ) is defined by two opposite trends. One of them promotes an increase in η with N d , and the other associated with Auger recombination leads to a decrease in η. The optimum value N d ≈ 2 × 1016 cm–3 at which η of such a cell is maximum is determined. It is shown that maximum η is 1.5–2% higher than η at 1015 cm–3.

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