Green luminescent center in undoped zinc oxide films deposited on silicon substrates
Bixia LinStructure Research Laboratory, Academia Sinca and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, ChinaZhuxi FuStructure Research Laboratory, Academia Sinca and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, ChinaYunbo JiaStructure Research Laboratory, Academia Sinca, University of Science and Technology, Hefei, Anhui 230026, China
2001en
ABI
Аннотация
The photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the I–V properties of the ZnO/Si heterojunctions were investigated at different annealing temperatures and atmospheres. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. It is concluded that the green emission corresponds to the local level composed by oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.
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