Powerful mid-infrared light emitting diodes forpollution monitoring
А. А. ПоповV. V. SherstnevY.P. YakovlevА. Н. БарановCentre d'Électronique et de Micro optoélectronique de Montpellier, UMR CNRS No 5507, Universite Montpellier, 2, Place Eugene Bataillon, Montpellier, 34095, FranceC. AlibertCentre d'Électronique et de Micro optoélectronique de Montpellier, UMR CNRS No 5507, Universite Montpellier, 2, Place Eugene Bataillon, Montpellier, 34095, France
1997en
ABI
Аннотация
Powerful mid-infrared (1.7–4.8 µm) light emitting diodes were manufactured by liquid phase epitaxy using GaSb-InAs compounds. Their output optical power was enhanced up to 2–3.5 mW using symmetrical double heterostructures with large band offsets. These diodes can be used as narrow bandwidth emitters for cost-reduced setups for atmospheric pollution monitoring.
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