Thickness dependence of La2−<i>x</i>Sr<i>x</i>CuO4 films
Marta Z. CieplakDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855M. BerkowskiInstitute of Physics, Polish Academy of Sciences, Warsaw, PolandSaikat GuhaDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855Erjian ChengDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855A. S. VagelosDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855D. J. RabinowitzDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855Bing WuDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855I. E. TrofimovDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855P. LindenfeldDepartment of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855
1994en
ABI
Аннотация
Pulsed laser deposition was used to grow c-axis aligned films of La2−xSrxCuO4−δ, with Sr content, x, in the range of 0.03 to 0.2, on substrates prepared from single-crystalline SrLaAlO4, with a lattice mismatch of 0.5%. The thickness dependence of Tc0, the temperature at which the resistance falls to zero, is much reduced compared to that of films deposited on SrTiO3, where the lattice mismatch is 3.4%. The maximum Tc0 is achieved at x=0.15 for both types of substrates. While the thickness dependence is related to the strain resulting from the lattice mismatch, the value of the maximum Tc0 is determined by the oxygen concentration.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 4Использованных источников: 0