3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics
H. K. ChoiLincoln Laboratory, Massachusetts Institute of Technology, 244 Wood St., Lexington, Massachusetts 02173-9108G. W. TurnerLincoln Laboratory, Massachusetts Institute of Technology, 244 Wood St., Lexington, Massachusetts 02173-9108Z. L. LiauLincoln Laboratory, Massachusetts Institute of Technology, 244 Wood St., Lexington, Massachusetts 02173-9108
1994en
ABI
Аннотация
Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range.
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