Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface
N. L. DmitrukInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineO. Yu. BorkovskayaInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineР. В. КонаковаInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineI.B. MamontovaInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineS.V. MamykinInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineD.I. VoitsikhovskiyInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine
2002en
ABI
Аннотация
The effect of 60Co gamma irradiation at doses of 103-2×105 Gy on the photoconversion and dark I-V characteristics of Au/GaAs surface-barrier solar cells (SCs) is studied. The morphology of the interface microrelief is varied to reach the highest photoconversion efficiency. Of the two types of microrelief morphology (dendritic and quasi-grating) obtained by the chemical anisotropic etching of n-(100)GaAs, the latter is more promising, particularly for SCs designed for space application, since the associated SCs offer higher efficiency and radiation resistance.
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