Specification of the dislocation mobility analysis in the low-temperature range

The results of a theoretical analysis of the combined effect of thermal and quantum fluctuations on dislocation motion in Peierls relief and through local barriers are given from an unified point of view. The procedure of the analysis of experimental data on low temperature dislocation mobility allowing to connect observed peculiarities of mobility with characteristics of potential barriers and quantum properties of dislocations is proposed. This procedure is used to analyze experimental data on dislocation mobility in single copper crystals obtained in a previous paper. It is shown that temperature anomalies observed are satisfactorily explained within the theory of quantum dislocation motion through local barriers. [Russian Text Ignored].

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