The non-radiative decay of free excitons as mediated by ionized donors in semiconductors

The probability of free-exciton decay in the presence of an ionized donor in a crystal, which leads to the neutralization of the ionized donor and the creation of a free hole, is suggested to be of the order of 0.5*10-5nd+ cm-3 s-1 in Si and GaP, and 0.2*10-4nd+ cm-3 s-1 in Ge, where nd+ is the concentration of ionized donors. These results are derived by means of a modification of a theory by Trlifaj, the limitations of which are pointed out.

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