Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

The electrical and photoluminescence properties of p-GaAs: Mn(100) layers grown by liquid-phase epitaxy from a bismuth solvent at various temperatures are investigated. It is shown that such layers have a low concentration of background impurities and a low degree of electrical compensation up to a hole concentration of p=1×1018 cm−3 at 295 K. As the concentration of manganese in the liquid phase increases, the concentration of donors in the GaAs: Mn layers increases superlinearly, while the concentration of ionized acceptors increases sublinearly. This leads to an increase in the compensation factor. The donor and acceptor concentrations, as well as the degree of compensation, increase more slowly with increasing temperature. Reasons for the donor compensation are discussed from a crystal-chemical point of view, and it is shown that the preassociation of manganese and arsenic atoms in the liquid phase could be responsible for generating these compensated donors. It is postulated that the compensating donors are nonradiative recombination centers, whose concentration increases with increasing doping level more rapidly than does the concentration of MnGa acceptors.

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