CdS photoluminescence inhibition by a photonic structure
Álvaro BlancoDepartamento Fı́sica Aplicada, Unidad Asociada CSIC-UPV, 46022 Valencia, SpainCefe LópezDepartamento Fı́sica Aplicada, Unidad Asociada CSIC-UPV, 46022 Valencia, SpainR. MayoralDepartamento Fı́sica Aplicada, Unidad Asociada CSIC-UPV, 46022 Valencia, SpainHernán MíguezDepartamento Fı́sica Aplicada, Unidad Asociada CSIC-UPV, 46022 Valencia, SpainF. MeseguerDepartamento Fı́sica Aplicada, Unidad Asociada CSIC-UPV, 46022 Valencia, SpainA. MifsudInstituto de Tecnologı́a Quı́mica (CSIC-UPV), 46022 Valencia, SpainJ. HerreroDepartamento de Energı́as Renovables (CIEMAT), E-28040 Madrid, Spain
1998en
ABI
Аннотация
Here we present experimental evidence of the strong modification of the CdS photoluminescence when it is embedded in a SiO2 colloidal photonic crystal. When the emitted light matches a forbidden photonic band in the matrix, inhibition of the semiconductor photoluminescence is achieved. In this work we prove the effective control of this effect by means of the photonic lattice parameter of the host. CdS was grown by chemical bath deposition and its quality has been checked employing Raman spectroscopy and x-ray diffraction. Scanning electron microscopy is used to study the morphology of the composite.
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